Enabling ultra low energy, high dose implants, ClusterBoron® B18H22 is the doping material of the future.
ClusterBoron® is a solid form of B18H22, which when delivered by our patented vapor delivery system, enables high dose, high throughput implants at energies as low as 200 eV. B18H22 + delivers eighteen boron atoms per ion to the wafer, the ion beam is transported to the wafer at 20 times the desired implant energy, and at 1/18th the desired dose rate: thus, a 20 keV, 1 mA B18H22 + implant is process-equivalent to 18 mA of B+ at 1 keV.
 Figure 3. Shows as-implanted SIMS profiles for 20 keV implants into silicon wafers. A drastic range reduction results from implanting B18H22 + or B10H14+ clusters versus B+ from BF3 . Each boron dose was 2E16/cm2. |
