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2010

Northern California Chapter of the American Vacuum Society – Junction Technology Group Meeting
(San Francisco, July 2010)

Molecular Implant for Advanced USJs
Wade Krull - SemEquip, Inc.

18th International Conference on Ion Implantation Technology, IIT 2010
(Kyoto, Japan, 6-11 June 2010) - PROCEEDINGS NOT YET PUBLISHED

Nissin's Boron and Carbon cluster ion implanter: CLARIS G2 (Presentation)
Yoshiki Nakashima, Nariaki Hamamoto, Sei Umisedo, Yuji Koga, H. Une, H. Asai, Noriaki Maehara, Yoshikazu Hashino, Y. Kawamura, M. Hashimoto, Masayasu Tanjyo, Tsutomu Nagayama, Hiroshi Onoda - Nissin Ion Equipment, Kyoto, Japan.
T. N. Horsky, S. K. Hahto - SemEquip, Inc.

Optimization of Si:C stress retention and junction quality with ClusterCarbon implantation (Presentation)
Karuppanan Sekar, Wade Krull - SemEquip, Inc.
Steve McCoy, Jeff Gelpey - Mattson Technology, Canada.

Larger ClusterBoron (B36Hx) Implant for USJ applications (Presentation)
Karuppanan Sekar, Wade Krull - SemEquip, Inc.
Karim Huet, Celia Boniface, Julien Venturini - Excico, France

USJ with ClusterBoron and ClusterCarbon Co-implants (Presentation)
Karuppanan Sekar, Wade Krull - SemEquip, Inc.

Cluster Ion Implantation for Process Application (Presentation)
M. Tanjyo, H. Onoda, T. Nagayama, N. Hamamoto, S. Umisedo, Y. Koga, H. Une, N. Maehara, Y. Kawamura, Y. Hashino, Y. Nakashima, M. Hashimoto, N. Tokoro, N. Nagai - Nissin Ion Equipment, Kyoto, Japan.
K. Sekar, W. Krull - SemEquip, Inc.

Universal Cluster Source (Presentation)
Thomas N. Horsky, Sami K. Hahto, Edward K. McIntyre - SemEquip, Inc.

Demonstration of cost-effective, highly productive Ultra-Shallow Junctions using Molecular Carbon and Boron as an alternative to Ge/C/B Implantation (Presentation)
Daniel R. Tieger, M. S. Ameen, M. A. Harris, T-J. Hsieh - Axcelis Technologies, Beverly, USA.
W. Krull - SemEquip, Inc.

Extension of the Si:C stressor thickness by using multiple ClusterCarbon species (Presentation)
Karuppanan Sekar, Wade Krull - SemEquip, Inc.

10th International Workshop on Junction Technology 2010
(Shanghai, China, 10-11 May 2010) - NOT YET PUBLISHED

©2010 IEEE. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of SemEquip, Inc's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.
By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Advances in Molecular Implant Technology (Invited)
Wade Krull - SemEquip, Inc.

Improvement of Productivity by Cluster Ion Implanter: CLARIS
Masayasu Tanjyo, Nariaki Hamamoto, Sei Umisedo, Yuji Koga, Hideyasu Une, Noriaki Maehara, Yasunori Kawamura, Yoshikazu Hashino, Yoshiki Nakashima, Masahiro Hashimoto, Tsutomu Nagayama, Sei Umisedo, Hiroshi Onoda, Nobuo Nagai - Nissin Ion Equipment, Kyoto, Japan.
Tom N. Horsky, Sami K. Hahto, Dale Jacobson - SemEquip, Inc.

217th Meeting of The Electrochemical Society
Volume 28, Issue 1 - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment.
(Vancouver, Canada, April 25-30, 2010)

The copyright holder of this article does not permit posting on this website.

Strained Si:C Using ClusterCarbon Implant (Invited)
Karuppanan Sekar, Wade A. Krull - SemEquip, Inc.

2009

17th IEEE International Conference on Advanced Thermal Processing of Semiconductors
(Albany, 29 September - 2 October 2009) - Website

Application and Advantages of Larger Boron Cluster Ions for 22nm and Beyond Technology Nodes (Presentation)
K. Sekar, W. Krull - SemEquip , Inc.
J. Chan, S. McCoy, J. Gelpey - Mattson Technology Canada, Vancouver, Canada

Northern California Chapter of the American Vacuum Society – Junction Technology Group Meeting
(San Francisco, July 2009) - Website

Cluster Implant for <10nm Junctions (Presentation)
Wade Krull - SemEquip, Inc.

9th International Workshop on Junction Technology 2009
(Kyoto, Japan, 7-8 June 2009)

©2009 IEEE. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of SemEquip, Inc's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.
By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

The following article appeared in Junction Technology, 2009. IWJT 2009. International Workshop on, DOI:10.1109/IWJT.2009.5166209 and may also be found at http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5166209
Formation of USJ with cluster implants for 32nm node and beyond (Invited)

Karuppanan Sekar, Wade Krull - SemEquip, Inc.

Insight 2009 - International Workshop on Insight in Semiconductor Device Fabrication, Metrology and Modeling
(Napa, California, 26-19 April 2009)

Interaction of phosphorus and ClusterCarbon™ in the NMOS Si:C stress application (Paper)
Interaction of phosphorus and ClusterCarbon™ in the NMOS Si:C stress application (Presentation)
Karuppanan Sekar, Wade Krull - SemEquip, Inc.
J. Chan, S. McCoy, J. Gelpey - Mattson Technology, Canada

Benefits of Molecular Implant for CMOS Manufacturing (Presentation)
T. N. Horsky, W. A. Krull, K. Sekar - SemEquip, Inc.

Journal of Vacuum Science and Technology B
(Mar/Apr 2009)

The following article appeared in J. Vac. Sci. Technol. B 27(2), Mar/Apr 2009, DOI: 10.1116/1.3089372 and may also be found at http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTBD9000027000002000597000001&idtype=cvips&gifs=Yes.

Amorphization of Si using cluster ions
Lucia Romano, Kevin S. Jones - University of Florida, Gainesville, Florida.

Karuppanan Sekar, Wade A. Krull - SemEquip, Inc.

Journal of The Electrochemical Society
Volume 156 Issue 5 - Semiconductor Devices, Materials, and Processing
(March 2009)

The copyright holder of this article does not permit posting on this website.

Silicon-Carbon Formed Using Cluster-Carbon Implant and Laser-Induced Epitaxy for Application as Source/Drain Stressors in Strained n-Channel MOSFETs
Shao-Ming Koh, Ganesh S. Samudra, Yee-Chia Yeo1 - National University of Singapore, Singapore.
Xincai Wang - Singapore Institute of Manufacturing Technology, Singapore
Karuppanan Sekar, Wade A. Krull - SemEquip, Inc.

2008

Materials Science and Engineering: B
(Dec 2008)

The copyright holder of this article does not permit posting on this website.

Optimization of ClusterCarbon^TM process parameters for strained Si lattice
Karuppanan Sekar, Wade A. Krull, Thomas N. Horsky - SemEquip, Inc.
Thomas Feudel, Christian Krueger, Stefan Flachowsky, Ina Ostermay - AMD Saxony, Dresden, Germany.

IEEE Electron Device Letters
(Dec 2008)

©2008 IEEE. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of SemEquip, Inc's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

N-Channel MOSFETs With Embedded Silicon-Carbon Source/Drain Stressors Formed Using Cluster-Carbon Implant and Excimer-Laser-Induced Solid Phase Epitaxy
Shao-Ming Koh, Ganesh S. Samudra, Yee-Chia Yeo - National University of Singapore, Singapore 117576.
Karuppanan Sekar, David Lee, Wade Krull - SemEquip, Inc.
Xincai Wang - Singapore Institute of Manufacturing Technology, Singapore 638075.

16th IEEE International Conference on Advanced Thermal Processing of Semiconductors
(Las Vegas, Nevada, 30 September - 3 October 2008) - Website

Annealing Behavior of ClusterCarbon^TM Implants (Presentation)
W. Krull, K. Sekar - SemEquip , Inc.
J. Chan, S. McCoy, J. Gelpey - Mattson Technology, Canada

Northern California Chapter of the American Vacuum Society – Junction Technology Group Meeting
(San Francisco, July 2008) - Website

Cluster Implant for 32nm (Presentation)
Wade Krull - SemEquip, Inc.

17th International Conference on Ion Implantation Technology, IIT 2008
(Monterey, California, 8-13 June 2008)

The following article appeared in AIP Conf. Proc. 1066, 403 (2008), DOI:10.1063/1.3033648 and may also be found at http://link.aip.org/link/?APCPCS/1066/403/1.

Beam Angular Divergence Effects in Ion Implantation
T. N. Horsky, S. K. Hahto, D. G. Bilbrough, D. C. Jacobson, W. A. Krull, R. D. Goldberg - SemEquip, Inc.

M. I. Current – Current Scientific, San Jose, CA.

S. Umisedo, N. Hamamoto, Y. Koga, H. Une, N. Maehara, T. Nagayama, M. Tanjyo, N. Nagai - Nissin Ion Equipment, Kyoto, Japan.

The following article appeared in AIP Conf. Proc. 1066, 296 (2008), DOI:10.1063/1.3033617 and may also be found at http://link.aip.org/link/?APCPCS/1066/296/1.

Nissin's New Cluster Implanter: CLARIS
N. Hamamoto, S. Umisedo - Nissin Ion Equipment, Kyoto, Japan.

T. N. Horsky, R. D. Goldberg, S. K. Hahto, D. G. Bilbrough, D. C. Jacobson, H. F. Glavish - SemEquip, Inc.

The following article appeared in AIP Conf. Proc. 1066, 340 (2008), DOI:10.1063/1.3033629 and may also be found at http://link.aip.org/link/?APCPCS/1066/340/1.

Beam Current Improvements on the Axcelis Optima HD Imax Implanter
D. R. Tieger, P. R. Splinter, T. J. Hsieh, W. P. Reynolds - Axcelis Technologies, Beverly, MA

R. D. Goldberg, D. C. Jacobson, E. K. McIntyre, S. K. Hahto, D. G. Bilbrough, D. Oved, T. N. Horsky - SemEquip, Inc.

The following article appeared in AIP Conf. Proc. 1066, 387 (2008), DOI:10.1063/1.3033642 and may also be found at http://link.aip.org/link/?APCPCS/1066/387/1.

ClusterBoron^® Implant Alternative to BF₂ PMOS SDE
Thomas Feudel, Ralf Illgen, Christian Krüger, Marek Braun - AMD Saxony, Dresden, Germany.

Karuppanan Sekar, David Lee, Wade Krull - SemEquip, Inc.

The following article appeared in AIP Conf. Proc. 1066, 395 (2008), DOI:10.1063/1.3033645 and may also be found at http://link.aip.org/link/?APCPCS/1066/395/1.

Improved Re-Crystallization of p⁺ Poly-Si Gates with Molecular Ion Implantation
Jin-Ku Lee, Min-Ae Ju, Jae-Geun Oh, Sun-Hwan Hwang, Seung-Joon Jeon, Ja-Chun Ku, Sungki Park - Hynix Semiconductor, Ichon, Korea.

Kyung-Won Lee, Steve Kim, Geum-Joo Ra, Ron Reece, Leonard M. Rubin - Axcelis Technologies, Beverly, MA.
W. A. Krull, H. T. Cho - SemEquip, Inc.

8th International Workshop on Junction Technology 2008
(Shanghai, China, 7-8 June 2008)

©2008 IEEE. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of SemEquip, Inc's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

The following article appeared in Junction Technology, 2008. IWJT ‘08. Extended Abstracts – 2008 8^th International Workshop on, DOI:10.1109/IWJT.2008.4540017 and may also be found at http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=4540017

Cluster Ion Implantation for beyond 45nm node novel device applications
Masayasu Tanjyo, Tsutomu Nagayama, Nariaki Hamamoto, Sei Umisedo, Yuji Koga, Noriaki Maehara, Takao Matsumoto, Nobuo Nagai - Nissin Ion Equipment, Kyoto, Japan.

Fumio Ootsuka, Akira Katakami, Kiyoshi Shirai, Toshinari Watanabe, Hiroyuki Nakata, Masami Kitajima, Takayuki Aoyama, Takahisa Eimori, Yasuo Nara, Yuzuru Ohji - Semiconductor Leading Edge Technologies (Selete), Tsukuba, Japan.

Karuppanan Sekar, Wade Krull, Dale Jacobson, Thomas Horsky - SemEquip, Inc.

MRS Spring Meeting 2008
(San Francisco, California, 24-28 March 2008)

The copyright holder of this article does not permit posting on this website.

Optimization of Stressor Layers Created by ClusterCarbon^TM Implantation
Karuppanan Sekar, Wade A. Krull, Thomas N. Horsky - SemEquip, Inc.

2007

15^th IEEE International Conference on Advanced Thermal Processing of Semiconductors
(Catania, Italy, 2-5 October 2007) - Website

Implants of ClusterBoron and ClusterCarbon^TM Materials for USJ Applications - a Study with Various Anneal Techniques (Presentation)
K. Sekar, W. Krull, T. Horsky - SemEquip, Inc.
J. Chan, S. McCoy, J. Gelpey - Mattson Technology Canada, Vancouver, Canada

7th International Workshop on Junction Technology 2007
(Kyoto, Japan, 7-8 June 2007)

©2007 IEEE. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of SemEquip, Inc's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
By choosing to view these documents, you agree to all provisions of the copyright laws protecting them.

The following article appeared in Junction Technology, 2007 International Workshop on, DOI:10.1109/IWJT.2007.4279941 and may also be found at http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=4279941

Latest Advances in Ion Implantation & Annealing for Gate and Channel (USJ) Doping Optimization
J. Borland – J.O.B. Technologies

W. Krull - SemEquip, Inc.

M. Tanjyo – Nissin Ion Equipment

M. Namaroff – Axcelis Technologies

A. Buczkowski – Nanometrics

The following article appeared in Junction Technology, 2007 International Workshop on, DOI:10.1109/IWJT.2007.4279964 and may also be found at http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=4279964

Development of Nissin New Boron Cluster Ion Implanter

N. Hamamoto, S. Umisedo, Y. Koga, T. Matsumoto, T. Nagayama, M. Tanjyo, N. Nagai – Nissin Ion Equipment Co. Ltd.

T. Horsky, D. Jacobson, H. Glavish – SemEquip, Inc

Insight 2007 - International Workshop on Insight in Semiconductor Device Fabrication, Metrology and Modeling
(Napa, California, 6-9 May 2007)

Ion Cluster Technology
W. A. Krull - SemEquip, Inc.

Elimination of Defects in USJ Formation by Beam Line Cluster Implantation Doping
T. N. Horsky, W. A. Krull, D. C. Jacobson, K. Sekar - SemEquip, Inc.

Self-Amorphization with Cluster Implantation
K. Sekar, W. A. Krull, T. N. Horsky, D. C. Jacobson - SemEquip, Inc.
K. Jones - University of Florida, Gainesville, Florida.
D. Henke - Qimonda, Dresden, Germany.

2006

Applied Physics Letters
(Vol 89, 2006)

The following article appeared in Appl. Phys. Lett. 89, 243516 (2006); doi:10.1063/1.2405863 and may also be found at http://link.aip.org/link/APPLAB/v89/i24/p243516/s1 .

Ultrashallow (<10 nm) p⁺/n junction formed by B₁₈H₂₂ cluster ion implantation and excimer laser annealing

Sungho Heo, Hyunsang Hwang – Gwangju Institute of Science and Technology, Gwangju, Korea.

H. T. Cho, W. A. Krull - SemEquip, Inc.

14^th IEEE International Conference on Advanced Thermal Processing of Semiconductors
(Kyoto, Japan, 10-13 October 2006) - Website

Optimization of Annealing for ClusterBoron® and ClusterCarbon™ PMOS SDE (Presentation)
K. Sekar, W. Krull - SemEquip, Inc.

K. Verheyden and K. Funk – ASM, Almere, The Netherlands.

16th International Conference on Ion Implantation Technology, IIT 2006
(Marseille, France, 11-16 June 2006)

The following article appeared in AIP Conf. Proc. 866, 159 (2006), DOI:10.1063/1.2401484 and may also be found at http://link.aip.org/link/?APCPCS/866/159/1.

Universal Ion Source™ for Cluster and Monomer Implantation
Thomas N. Horsky - SemEquip, Inc.

The following article appeared in AIP Conf. Proc. 866, 198 (2006), DOI:10.1063/1.2401494 and may also be found at http://link.aip.org/link/?APCPCS/866/198/1.

Boron Beam Performance and in-situ Cleaning of the ClusterIon^® Source
Thomas N. Horsky, Glen F. R. Gilchrist, and Robert W. Milgate III - SemEquip, Inc.

The following article appeared in AIP Conf. Proc. 866, 182 (2006), DOI:10.1063/1.2401490 and may also be found at http://link.aip.org/link/?APCPCS/866/182/1.

Simplifying the 45nm SDE Process with ClusterBoron^® and ClusterCarbon™ Implantation
Wade Krull, Brian Haslam, Tom Horsky - SemEquip, Inc.

Kurt Verheyden and Klaus Funk – ASM, Leuven, Belgium.

The following article appeared in AIP Conf. Proc. 866, 178 (2006), DOI:10.1063/1.2401489 and may also be found at http://link.aip.org/link/?APCPCS/866/178/1.

A Vaporizer for Decaborane and Octadecaborane
Doug Adams, Tom Horsky, Glen Gilchrist, Robert Milgate - SemEquip, Inc.
Joe Sweeney, Paul Marganski – ATMI, Danbury, CT.

The following article appeared in AIP Conf. Proc. 866, 167 (2006), DOI:10.1063/1.2401486 and may also be found at http://link.aip.org/link/?APCPCS/866/167/1.

A Beam Line System for a Commercial Borohydride Ion Implanter
H. F. Glavish, T.N. Horsky, D.C. Jacobson, F. Sinclair - SemEquip, Inc.
N. Hamamoto, N. Nagai, and M. Naito - Nissin Ion Equipment, Kyoto, Japan.

The following article appeared in AIP Conf. Proc. 866, 96 (2006), DOI:10.1063/1.2401470 and may also be found at http://link.aip.org/link/?APCPCS/866/96/1.

High Dopant Activation And Low Damage P+ USJ Formation
John Borland – J.O.B. Technologies, Aiea, HI

Seiichi Shishiguchi, Akira Mineji – NEC Electronics Corp., Sagamihara, Japan

Wade Krull, Dale Jacobson – SemEquip, Inc.

Masayasu Tanjyo – Nissin Ion Equipment, Kyoto, Japan

Wilfried Lerch, Silke Paul, Jeff Gelpey, Steve McCoy – Mattson Technology, Fremont, CA

Julien Venturini – Sopra Optical Solutions, Bois-Colombes, France

Michael Current, Vladimir Faifer – Frontier Semiconductor, San Jose, CA

Robert Hillard, Mark Benjamin – Solid State Measurements, Pittsburgh, PA

Tom Walker, Andrzej Buczkowski, Zhiqiang Li – Accent Optical Technologies, Bend, OR

James Chen – Four Dimensions, Hayward, CA

The following article appeared in AIP Conf. Proc. 866, 206 (2006), DOI:10.1063/1.2401496 and may also be found at http://link.aip.org/link/?APCPCS/866/206/1.

ClusterBoron^® Implants on a High Current Implanter
Daniel R. Tieger, William DiVergilio, Edward C. Eisner, Mark Harris, T.J. Hsieh, John Miranda, William P. Reynolds - Axcelis Technologies, Beverly, MA
Tom Horsky - SemEquip, North Billerica, MA

The following article appeared in AIP Conf. Proc. 866, 163 (2006), DOI:10.1063/1.2401485 and may also be found at http://link.aip.org/link/?APCPCS/866/163/1.

Investigation of Converted p⁺ poly-Si Gate Formed by B₁₈H_X⁺ Cluster Ion Implantation
Sun-Hwan Hwang, D. S. Kim, Y. H. Joo, J. G. Oh, J. K. Lee, T. W. Jung, H. J. Cho, Y. S. Sohn, D. S. Sheen, S. H. Pyi - Hynix Semiconductor, Ichon, Korea.
Steve Kim, T. H. Huh - Axcelis Technologies, Suwon, Korea.
W. A. Krull, H. T. Cho - SemEquip, Inc.

The following article appeared in AIP Conf. Proc. 866, 155 (2006), DOI:10.1063/1.2401483 and may also be found at http://link.aip.org/link/?APCPCS/866/155/1.

Dose Retention Effects in Atomic Boron and ClusterBoron^® (B₁₈H₂₂) Implant Processes
Mark A. Harris, L. Rubin, D. Tieger, V. Venezia, T. J. Hsieh, J. Miranda - Axcelis Technologies, Beverly, MA.
D. Jacobson - SemEquip, Inc.

6th International Workshop on Junction Technology 2006
(Shanghai, China, 7-8 June 2006)

©2006 IEEE. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of SemEquip, Inc's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
By choosing to view these documents, you agree to all provisions of the copyright laws protecting them.

The following article appeared in Junction Technology, 2006. IWJT 2006. International Workshop on, DOI:10.1109/IWJT.2006.220849 and may also be found at http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1669436

45 nm node p⁺ USJ formation with high dopant activation and low damage (Invited)
John Borland – J.O.B. Technologies, Aiea, HI

Seiichi Shishiguchi, Akira Mineji – NEC Electronics Corp., Sagamihara, Japan

Wade Krull, Dale Jacobson – SemEquip, Inc.

Masayasu Tanjyo – Nissin Ion Equipment, Kyoto, Japan

Wilfried Lerch, Silke Paul, Jeff Gelpey, Steve McCoy – Mattson Technology, Fremont, CA

Julien Venturini – Sopra Optical Solutions, Bois-Colombes, France

Michael Current, Vladimir Faifer – Frontier Semiconductor, San Jose, CA

Robert Hillard, Mark Benjamin – Solid State Measurements, Pittsburgh, PA

Tom Walker, Andrzej Buczkowski, Zhiqiang Li – Accent Optical Technologies, Bend, OR

James Chen – Four Dimensions, Hayward, CA

The following article appeared in Junction Technology, 2006. IWJT 2006. International Workshop on, DOI:10.1109/IWJT.2006.220856 and may also be found at http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1669443

Maximizing boron activation in solid phase epitaxy – A case of implant choice and RTP
Klaus Funk, Kurt Verheyden, Xavier Pages, Jeroen v. Hapert, Ernst Granneman – ASM Europe, Netherlands.

Wade Krull - SemEquip, Inc.

The following article appeared in Junction Technology, 2006. IWJT 2006. International Workshop on, DOI:10.1109/IWJT.2006.220858 and may also be found at http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1669445

Characteristics of ultrashallow p+/n junction prepared cluster boron (B₁₈H₂₂) ion implantation and excimer laser annealing
Sungho Heo, Seokjoon Oh, Musarrat Hasan, Hyunsang Hwang – Gwang-Ju Institute of Science and Technology, Korea.

H. T. Cho, W.A. Krull - SemEquip, Inc.

The following article appeared in Junction Technology, 2006. IWJT 2006. International Workshop on, DOI:10.1109/IWJT.2006.220888 and may also be found at http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1669475

Formation and thermal stability characteristics of Ni silicide on boron cluster (B₁₈H₂₂) implanted source/drain
W. J. Lee, S. Y. Oh, Y. J. Kim, Y. Y. Zhang, Z. Zhong, S. Y. Jung, H. H. Ji, J. S. Wang, H. D. Lee – Chungnam National University, Korea.

K. J. Hwang - MagnaChip Semiconductor Ltd., Korea

Y. C. Kim – Korea University of Technology and Education, Korea

H. T. Cho, W.A. Krull - SemEquip, Inc.

2005

Northern California Chapter of the American Vacuum Society – Junction Technology Group Meeting
(San Francisco, July 2005) - Website

Why Cluster Implantation? (Presentation)
Tom Horsky - SemEquip, Inc.

5th International Workshop on Junction Technology 2005
(Osaka, Japan, 7-8 June 2005)

©2005 IEEE. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of SemEquip, Inc's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

The following article appeared in Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on, INSPEC Accession Number: 8836257 and may also be found at http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1598656

 Using Boron Cluster Ion Implantation to Fabricate Ultra-Shallow Junctions (Invited)

Dale Jacobson - SemEquip, Inc.

Article from Semiconductor International Magazine, January 2005

Applying Equivalent Scaling to USJ Implantation
John O. Borland - J.O.B. Technologies, South Hamilton, MA;
Masayasu Tanjyo and Nobuo Nagai - Nissin Ion Equipment Co. Ltd., Kyoto, Japan;
Takayuki Aoyama, Fujitsu Labs - Akiruno Technology Center, Tokyo;
Dale Jacobson - SemEquip Inc.

2004

15th International Conference on Ion Implantation Technology, IIT 2004
(Taipei, Taiwan, 24-29 October 2004)

Ultra-Shallow Junction Formation by B₁₈H₂₂ Ion Implantation
Y. Kawasaki (first author) - Renesas Technology Corp., Itami, Japan

ClusterIon ^® Source for Cluster Implantation
Thomas Horsky (first author) - SemEquip, Inc.

A New Doping Material for P-Type Ultra-Shallow Junctions B₁₈H₂₂or ClusterBoron^™
Dale Jacobson (first author) - SemEquip, Inc.

Ultra-High Resolution Mass Spectroscopy of Boron Cluster Ion Beams
Dale Jacobson (first author) - SemEquip, Inc.

2003

Technology Innovation Showcase - SEMICON West 2003
(San Francisco, California, 14 July 2003)

ClusterIon^® Ion Source — The Future of Implantation
Tom Horsky and Dale Jacobson - SemEquip, Inc.

Ultra Shallow Junction Conference Abstract
(Santa Cruz, California, 28 April - 1 May 2003)

Implantation of N- and P-Type Cluster Ions for Shallow Junction Formation
Tom Horsky, Dale Jacobson and Wade Krull - SemEquip, Inc.

2002

14th International Conference on Ion Implantation Technology, IIT 2002 Abstracts
(Taos, New Mexico, 22-27 September 2002)

SemEquip Ion Source Performance
Tom Horsky, Dale Jacobson and Wade Krull - SemEquip, Inc.

N- and P-Type Cluster Formation and Negative Ion Production in the SemEquip Ion Source
Tom Horsky, Dale Jacobson and Wade Krull - SemEquip, Inc.

Emittance Measurements of the SemEquip Ion Source
Dale Jacobson, Tom Horsky and Hilton Glavish - SemEquip, Inc.