Introduction
SemEquip develops ion sources for application to the semiconductor industry. These sources are a critical component of ion implanters, which are used to fabricate the doping structures that create transistors. Our initial target is the formation of ultra shallow junctions, which require very low energy implants. For more information, click on a topic below:

Ion Implantation
            Implantation Basics
            Implant Process
            Implanter Types and Vendors

Industry Trends
            Scaling
            300mm Transition

Ultra Shallow Junctions
            Transistor Requirements
            P-type USJs
            N-type USJs

Cluster Ion Beams
            Why Cluster Ion Beams?
            Benefit for USJ
            Boron Cluster Ion Beams
            Arsenic Tetramer Ion Beams

SemEquip Ion Source
            Ionization Process
            Molecular Preservation
            Cluster Formation
            Beam Current
            Brightness and Emittance